Yale's T.p. Ma Proposes Unipolar Cmos

摘要

Yale University Professor T.P. Ma has proposed an all-n-channel CMOS that could be faster and simpler to fabricate than today's CMOS, which relies on both electrons and holes as carriers. Ma calls his proposal Unipolar CMOS, and he described it for the first time at the Sematech-organized International Symposium on Advanced Gate Stack Technology in October. The device is a dual-channel structure that would use electrons in both the front and back channels, taking advantage of the higher mobility of electrons compared with holes. For III-V channels such as GalnAs and InAs, the disparity between hole and electron mobility is more than an order of magnitude. At room temperature, holes in silicon have a mobility of 450 cm~2/Vs, while electron mobility is 1500 cm~2/Vs.