Good memory performance and coexistence of bipolar and unipolar resistive switching for CMOS compatible Ti/HfOx/W memory

摘要

The HfOx device with CMOS compatible W BE is successfully demonstrated. The devices exhibit the low VFORM and good switching performance. The coexistence of bipolar and unipolar switching for the Ti/HfOx/W device is presented. The current reduction of bipolar and unipolar operation is by the decrease of compliance current and cell size, respectively.