Unipolar Resistive Switch Based on Silicon Monoxide Realized by CMOS Technology

摘要

In this letter, a reliable nonvolatile resistive switching device based on silicon monoxide (SiO) is demonstrated. The device was fabricated with a low-temperature process that can be compatible with a CMOS back-end process and attractive for 3-D memory integration. The fabricated Cu/SiO/W device was found to have a repeatable unipolar resistive switching behavior. The results show excellent on/off resistance ratio (over 104) and good retention performance. The switching mechanism of the device is analyzed by experimental data and probably can be attributed to the behaviors of copper ions in the bulk of SiO under different voltages.