Low-energy electron-beam irradiation of GaN-based quantum well structures

摘要

The electronic properties of (In, Ga)N/GaN quantum wells significantly depend on the exposure dose of low-energy electron-beam irradiation (LEEBI), which is used, e.g., for cathodoluminescence (CL). For unintentionally doped structures, we observe a simultaneous LEEBI-induced activation of donors and acceptors. Thus, the resistivity of the layers remains unchanged, while the quantum efficiency and optical transition energy increase significantly under LEEBI. The electric-field distribution in a p-n structure is changed towards the flat-band condition during LEEBI indicating an electron-beam-induced passivation of acceptors in the p-type layer.