Dislocation Glide in GaN Films Grown by the Lateral-Overgrowth Method Induced by Low-Energy Electron-Beam Irradiation

摘要

The effect of irradiation on the dislocation structure of epitaxial GaN films, grown by the lateralovergrowth method, is studied using the electron-beam-induced current mode in a scanning electron microscope. Low-energy electron-beam irradiation is found to lead to the gliding basal-plane dislocations even at very low excitation levels. Changes in the relative contrast of two segments of adjacent basal-plane dislocations may also indicate dislocation movement in the prismatic planes.