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Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
Method for producing a wafer comprising a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side
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机译:晶片的制造方法,该晶片包括具有正面和背面以及沉积在正面上的SiGe层的硅单晶衬底
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摘要
A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order:simultaneously polishing the front and the back side of the silicon single crystal substrate;depositing a stress compensating layer on the back side of the silicon single crystal substrate;polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; anddepositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.展开▼