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Method For Producing A Wafer Comprising A Silicon Single Crystal Substrate Having A Front And A Back Side And A Layer of SiGe Deposited On The Front Side
Method For Producing A Wafer Comprising A Silicon Single Crystal Substrate Having A Front And A Back Side And A Layer of SiGe Deposited On The Front Side
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机译:晶片的制造方法,该晶片包括硅单晶衬底,该硅单晶衬底具有正面和背面以及在正面沉积的SiGe层
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摘要
A method for producing a wafer with a silicon single crystal substrate having a front and a back side and a layer of SiGe deposited on the front side, the method using steps in the following order:simultaneously polishing the front and the back side of the silicon single crystal substrate;depositing a stress compensating layer on the back side of the silicon single crystal substrate;polishing the front side of the silicon single crystal substrate; cleaning the silicon single crystal substrate having the stress compensating layer deposited on the back side; anddepositing a fully or partially relaxed layer of SiGe on the front side of the silicon single crystal substrate.展开▼