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首页> 外文期刊>Journal of Electronic Materials >Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding
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Single-Crystalline Silicon Layer Transfer to a Flexible Substrate Using Wafer Bonding

机译:使用晶圆键合将单晶硅层转移到柔性基板上

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This paper reports the successful transfer of a thin single-crystalline silicon film to a flexible, transparent polymer substrate. Thin-film silicon on polymer was realized by bonding a silicon-on-insulator (SOI) wafer to a flexible substrate using a spin-on polymer as an adhesive. The SOI wafer was thinned by a grinding operation followed by chemical mechanical polishing (CMP). The SOI was further thinned to the buried oxide using wet etchants. The residual stress in the transferred substrate was investigated by ultraviolet (UV) micro-Raman spectroscopy and numerical modeling. Both approaches showed that a low level of stress was created at the bonded interface during the layer transfer.
机译:本文报道了单晶硅薄膜成功转移到柔性,透明聚合物基板上的成功过程。聚合物上的薄膜硅是通过使用旋涂聚合物作为粘合剂将绝缘体上硅(SOI)晶圆粘合到柔性基板上来实现的。 SOI晶片通过研磨操作随后化学机械抛光(CMP)进行了减薄。使用湿蚀刻剂将SOI进一步​​减薄为掩埋氧化物。通过紫外(UV)显微拉曼光谱和数值模拟研究了转移后的基材中的残余应力。两种方法都表明,在层转移过程中,在粘结界面处产生的应力水平较低。

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