Analytical model for the dispersion of sub-threshold current in organic thin-film transistors

摘要

This paper proposes an equivalent circuit model to analyze the reason for the dispersion of sub-threshold current (also known as zero-current point dispersion) in organic thin-film transistors. Based on the level 61 amorphous silicon thin-film transistor model in star-HSPICE, the results from our equivalent circuit model simulation reveal that zero-current point dispersion can be attributed to two factors: large contact resistance and small gate resistance. Furthermore, it is found that decreasing the contact resistance and increasing the gate resistance can efficiently reduce the dispersion. If the contact resistance can be controlled to 0 Ω, all the zero-current points can gather together at the base point. A large gate resistance is good for constraining the dispersion of the zero-current points and gate leakage. The variances of the zero-current points are 0.0057 and nearly 0 when the gate resistances are 17 MΩ and 276 MΩ, respectively.