Analytical modeling of transconductance in organic thin-film transistors

摘要

In this paper we present a new approach to the analytical modeling of transconductance in organic field effect transistors. The proposed model is based on the standard transistor equations and accurately describes the transconductance in saturation regime with a unique formula, that seems suitable for analog circuit design. All the model parameters are discussed in details and simulation of the final model is performed using a Matlab code. Finally we validated the proposed model by comparison of the simulation result with experimental data and good agreement between them is found.