机译:C桥长度对碳碳硅烷低k薄膜抗紫外线性能的影响
Imec, Kapeldreef 75, 3001 Leuven, Belgium,Department of Inorganic and Physical Chemistry, Centre for Ordered Materials, Organometallics and Catalysis (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent, Belgium;
Leibniz-Institut fuer Oberflaechenmodifizierung, Permoserstrasse 15,04318 Leipzig, Germany;
Leibniz-Institut fuer Oberflaechenmodifizierung, Permoserstrasse 15,04318 Leipzig, Germany;
Imec, Kapeldreef 75, 3001 Leuven, Belgium,Department of Chemistry, KU Leuven, Celestijnenlaan 200f, 3001 Leuven, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
Department of Inorganic and Physical Chemistry, Centre for Ordered Materials, Organometallics and Catalysis (COMOC), Ghent University, Krijgslaan 281-S3, B-9000 Ghent, Belgium;
Imec, Kapeldreef 75, 3001 Leuven, Belgium;
机译:碳硅烷低k膜的紫外线固化
机译:等离子体蚀刻对多孔碳硅烷超低k电介质的破坏研究
机译:紫外光波长和紫外光固化时间对PECVD沉积的多孔超低k膜的化学和机械性能的影响
机译:碳硅烷低k膜的激光退火
机译:通过沉积方法和膜厚控制和设计PECVD碳掺杂低k二氧化硅薄膜的关键性能。
机译:用于进一步缩小超大型集成器件-Cu互连的等离子增强化学气相沉积SiCH膜的低k覆盖层的材料设计
机译:C桥长度对抗紫外线或氧碳硅烷低k薄膜的影响