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MANUFACTURING METHOD OF LOW-K THIN FILMS AND LOW-K THIN FILMS MANUFACTURED THEREFROM

机译:低k薄膜的制造方法及由其制得的低k薄膜

摘要

The present invention relates to a method of manufacturing a low-k thin film and the low-k thin film manufactured therefrom. More specifically, the method of manufacturing a low-k thin film in accordance with an embodiment of the present invention includes subjecting thin film, which is formed by plasma polymerization, to post-heat treatment using an RTA device, and low-k thin film manufactured therefrom.;A method of manufacturing a low-k thin film in accordance with an embodiment of the present invention includes: evaporating a precursor solution including decamethylcyclopentasiloxane and cyclohexane in a bubbler; inflowing the evaporated precursor from the bubbler to a plasma deposition reactor; depositing a plasma-polymerized thin film on a substrate in the reactor by using a plasma in the reactor; and post-heat-treating by an RTA device.
机译:低k薄膜的制造方法及低k薄膜技术领域本发明涉及低k薄膜的制造方法及由其制造的低k薄膜。更具体地,根据本发明的实施方式的制造低k薄膜的方法包括使用RTA装置对通过等离子体聚合形成的薄膜进行后热处理,以及低k薄膜。根据本发明的一个实施方式的低k薄膜的制造方法包括:在起泡器中蒸发包括十甲基环五硅氧烷和环己烷的前体溶液;以及将所述前体溶液蒸发。将蒸发的前体从起泡器流入等离子体沉积反应器;通过在反应器中使用等离子体在反应器中的基板上沉积等离子体聚合的薄膜;并通过RTA设备进行后热处理。

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