Effect of Varying Dwell Time During Non-Melt Laser Annealing of Boron Implanted Silicon

摘要

As the fabrication for the CMOS technology trends to decreasing the size of transistors for the benefit of increased performance and device density, the implant and annealing process technologies are being forced to meet increasingly challenging demands for ultra-shallow junctions. As the current annealing preferences shift from rapid thermal annealing toward sub-second RTP technologies such as flash and laser annealing, the dynamics of micro-structural evolution on the order of milliseconds and microseconds become of increasing importance. To investigate the kinetics in this ultra-fast annealing regime, this study investigated the effect of varying the temperature and time of a scanning laser anneal in the millisecond and microsecond timeframe. Amorphous layers were created in silicon substrates using a 30 keV silicon implant at a dose of 1 × 10~(15) ions/cm~3. These wafers were then processed using a scanning continuous wave near infra-red laser at varying temperatures and scan rates in order to vary the dwell time of each condition. A combination of sheet resistance, optical interferometry, and secondary ion mass spectrometry characterization techniques were used in order to investigate the activation and diffusion of these laser annealed samples. The regrowth temperature across all samples showed a positive correlation to the sheet resistance, trending toward lower values as temperatures increased. Dwell time, however, showed an inverse effect at lower temperatures. The microsecond anneal at 1200℃ showed a lower R_s than the millisecond anneal, while at higher temperatures the trend reversed. These trends show an obvious competition between activation and diffusion mechanisms and their dependence on regrowth temperature.