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Laser annealing systems and methods with ultra-short dwell times
Laser annealing systems and methods with ultra-short dwell times
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机译:停留时间超短的激光退火系统和方法
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摘要
Laser annealing systems and methods with ultra-short dwell times are disclosed. The method includes locally pre-heating the wafer with a pre-heat line image and then rapidly scanning an annealing image relative to the pre-heat line image to define a scanning overlap region that has a dwell time is in the range from 10 ns to 500 ns. These ultra-short dwell times are useful for performing surface or subsurface melt annealing of product wafers because they prevent the device structures from reflowing.
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