Electron microscopy and x-ray techniques have been used to investigate dislocation generation, precipitation of dopants and intrinsic defects, and the relaxation of unidirectional strains after thermal annealing of boron implanted, laser annealed silicon. It is shown that the number density of dislocations created near the interface after thermal annealing is small and therefore the unidirectional nature of the contraction in the dopes layer is essentially retained. A small number density of defect clusters (mostly vacancy dislocation loops, average size 20A) was also observed after thermal annealing at 1000 exp 0 C. Boron depth profile changes, as determined by secondary ion mass spectroscopy, indicated an increase in boron concentration near the surface in addition to the expected broadening of profiles after thermal annealing. (ERA citation 04:024032)
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