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Origin of 'Current-Onset Voltage' Variability in Scaled MOSFETs

机译:缩放MOSFET中的“电流开启电压”变异性的原点

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Present work analyzes the cause of "current-onset voltage" variability, which has been newly found to largely affect drain current variability [1]. It is found by 3D device simulation that the "current-onset voltage" variability is determined by how largely the channel potential fluctuates by random dopant disposition. Reducing RDF will suppress both threshold voltage and current-onset voltage variability as well.
机译:目前的工作分析了“电流开展电压”变异性的原因,该原因已被新发现在很大程度上影响漏极电流变化[1]。通过3D设备模拟发现,“电流开启电压”可变性是通过随机掺杂剂置位的大部分波动来确定的“电流开启电压”可变性。还原RDF也将抑制阈值电压和电流开启电压变化。

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