The effect of annealing graphene in O_2 and N2 flow

摘要

Thermal annealing is potentially capable of removing surface contaminants of polymers on graphene while annealing parameters are crucial to prevent graphene from unintended damages. We studied the influence of O_2 flow and N2 flow during an anneal treatment on few-layer graphene through transmittance and Raman spectroscopy. Annealing in O_2 atmosphere at 400 °C was observed to provide graphene with being etched and damaged. On the other hand, by annealing in N2, a noticeable change in the defect state was hardly observed while amorphous carbon was found on the surface, which is expected to be due to the decomposition of polymer residues at the graphene surface.