Effects of O_2 and N2 Flow Rate on the Electrical Properties of Fe-O-N Thin Films N^Yukiko OgawaDepartment of Materials Science, Tohoku University, Sendai 980-8579, Japan

摘要

We report the dependence of electrical properties of Fe-O-N thin firms on the deposition condition as well as on O_2 and N_2 gas flow rate. Fe-O-N films were deposited by reactive sputtering using O_2 and N_2 as reactive gas. The electrical resistivity of Fe-O-N films increased with increasing Q_2 and N_2 gas flow rate. The resistivity increase with the O_2 flow rate was due to structure change from a mixed phase of metallic Fe+Fe_3O_4, to a mixed phase of FeO+a-Fe_2O_3, and to a single phase of a-Fe_2O3, as evidenced by XPS analysis of Fe 2p core excitation peaks. Meanwhile, the resistivity increase with the N_2 flow rate was due to structure change from a metallic Fe, to a mixed phase of metallic Fe+Fe3O4, and to a single phase of Fe_3O_4,