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Annealing and N2 Plasma Treatment to Minimize Corrosion of SiC-Coated Glass-Ceramics

机译:退火和N2等离子处理可最大程度地减少SiC涂层玻璃陶瓷的腐蚀

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摘要

To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC’s chemical durability. By combining N plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.
机译:为了提高玻璃陶瓷上SiC基涂层的化学耐久性,研究了退火和N等离子处理的效果。通过等离子增强化学气相沉积(PECVD)用SiC涂覆氟磷灰石玻璃陶瓷盘,先用N等离子处理,然后进行退火步骤,进行表征,然后将其浸入pH 10的缓冲溶液中30天以研究涂层分层。发现在pH 10浸没期间,沉积后退火可以使沉积的SiC致密化并减少SiC的分层。当用N等离子体处理SiC 10分钟时,SiC涂层的整体性能不会受到影响,但表面孔被密封,从而稍微提高了SiC的化学耐久性。通过将N等离子处理与沉积后退火步骤相结合,将薄膜分层在pH 10溶液中浸泡30天后,从94%减少到2.9%。 X射线光电子能谱(XPS)在等离子体处理过的薄膜表面检测到较高的氧气浓度,表明形成了薄的SiO层,并可能有助于孔密封。总之,沉积后退火和N等离子体处理可显着改善PECVD沉积的SiC薄膜的化学耐久性,该薄膜用作玻璃陶瓷涂层。

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