Center for Compound Semiconductors, School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332-0250;
School of Materials Science and Engineering, Georgia Institute of Technology, Atlanta GA 30332-0245;
light emitting diodes; InGaN/GaN multiple quantum wells; p-type layers; superlattices; green LEDs;
机译:覆盖p-InGaN / p-GaN超晶格的表面层对与p-GaN的接触的影响
机译:使用p-InGaN / p-GaN超晶格的偏振诱导InGaN-GaN LED的低导通电压和串联电阻
机译:具有p-InGaN / p-GaN超晶格空穴累积层的InGaN基发光二极管的优点
机译:IngaN MQW绿色LED使用P-Ingan和P-Ingan / P-GaN Supertrices作为p型层
机译:利用纳米技术在Si上生长,制造和表征基于InGaN / GaN的蓝色,绿色和黄色LED。
机译:梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
机译:掺Mg的p-InGaN层制备的InGaN / GaN p-i-n光电二极管