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Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers
Method of forming a laminate of epitaxially grown cubic silicon carbide layers, and method of forming a substrate-attached laminate of epitaxially grown cubic silicon carbide layers
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机译:形成外延生长的立方碳化硅层的叠层的方法,以及形成衬底附着的外延生长的立方碳化硅层的叠层的方法
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摘要
A method for manufacturing a cubic silicon carbide film includes: a first step of introducing a carbon-containing gas onto a silicon substrate and rapidly heating the silicon substrate to an epitaxial growth temperature of cubic silicon carbide so as to carbonize a surface of the silicon substrate and form a cubic silicon carbide film; and a second step of introducing a carbon-containing gas and a silicon-containing gas onto the cubic silicon carbide film while maintaining the cubic silicon carbide film at the epitaxial growth temperature of cubic silicon carbide, so as to allow further epitaxial growth of the cubic silicon carbide film.
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