Center for Crystal Science and Technology;
University of Yamanashi;
Kofu;
Japan;
Graduate School of Engineering;
Nagoya University;
Nagoya;
Japan;
Institut des Nanotechnologies de Lyon;
site INSA-Lyon;
Villeurbanne;
France;
Center for Creative Technology;
University of Yamanashi;
Kofu;
Japan;
Center for Instrumental Analysis;
University of Yamanashi;
Kofu;
Japan;
Porous; Silicon; Silicon; Germanium; Strain; Relaxation; Strained; Silicon; Nanostructure; High-Mobility; Semiconductors; Transmission; Electron; Microscopy;