A method for producing improved hetero epitaxial grown silicon carbide layers on silicon substrates.

摘要

A method for producing improved hetero epitaxial grown silicon carbide layers on silicon substrates,the silicon substrate is preheated, and the surface of the epitaxial layer is irradiated with a light pulse,characterized by the,that prior to preheating and in front of the light pulse irradiation a is comprised of an intermediate layer and a covering layer, consisting of an auxiliary layer system is applied andthat the auxiliary layer system according to the light pulse treatment and becoming structure conversion is removed.