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Thermal Transformation of Carbon Hybrid Materials to Graphene Films

机译:碳杂化材料向石墨烯薄膜的热转化

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摘要

We demonstrate a simple approach to grow graphene films on polycrystalline nickel (Ni) foils, in which polycrystaUine carbon hybrid materials (CHMs) were used in sandwich structures (molybdenum-CHMs-Ni-molybdenum) as a carbon source for graphene, and pressure was then applied to the sandwich. The CHMs were transformed into single as well as few layer graphene by a segregation—precipitation process. The applied pressure not only increased the density of the graphene films but also reduced the vaporization of dissociated carbon molecules of the CHMs. We have explored the possibility to grow graphene films in low vacuum (5 × 10~(-1) Pa) at relatively low temperatures (<750 °C). The formation of the graphene films at 750 °C is simple and cost-effective and can be scaled up.
机译:我们展示了一种在多晶镍(Ni)箔上生长石墨烯膜的简单方法,其中在夹层结构(钼-CHMs-镍-钼)中使用polycrystaUine碳杂化材料(CHMs)作为石墨烯的碳源,压力为然后涂在三明治上通过分离沉淀过程,将CHM转化为单层或多层石墨烯。施加的压力不仅增加了石墨烯薄膜的密度,而且减少了CHM的离解碳分子的蒸发。我们已经探索了在相对较低的温度(<750°C)下在低真空(5×10〜(-1)Pa)中生长石墨烯薄膜的可能性。在750°C的条件下形成石墨烯薄膜既简单又经济高效,并且可以扩大规模。

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