首页> 外文期刊>The journal of physical chemistry, B. Condensed matter, materials, surfaces, interfaces & biophysical >A Novel Approach for CdS Thin-Film Deposition: Electrochemically Induced Atom-by-Atom Growth of CdS Thin Films from Acidic Chemical Bath
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A Novel Approach for CdS Thin-Film Deposition: Electrochemically Induced Atom-by-Atom Growth of CdS Thin Films from Acidic Chemical Bath

机译:CdS薄膜沉积的新方法:酸性化学浴中电化学诱导CdS薄膜的逐原子生长

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Thin films of cadmium sulfide (CdS) have been electrochemically deposited in acidic chemical baths (pH between 1.4 and 4.6) containing cadmium chloride and thioacetamide (TAA). Although chemical formation of CdS particles continuously occurs in the solution phase, no chemical growth of CdS thin film takes place under the acidic conditions. Electroreduction of protons at conductive substrates at small current densities (several tens of μA/cm~2) was found to trigger a growth of highly crystallized hexagonal CdS thin films. The resultant film consists of particles having hexagonal cylindrical shape. The individual particles are made up of single crystals of CdS. The film growth is achieved by the atom-by-atom growth of individual crystallites and not by the agglomeration of fine particles formed in the solution phase. The film could become as thick as 500 nm without suffering from disordering of the film structure. Kinetic analysis was made for the formation of CdS particles in the solution phase, the film growth, and the electroreduction of protons at the substrate. Different activation energies of 75.3, 56.7, and 21.0 kJ/mol were found for these processes, respectively. The deposition mechanism is different from the ordinary electrodeposition process, since the film growth is not under control of the electrode kinetics. In is supposed that the electroreduction of protons imposes a pH gradient at the vicinity of the substrate to reduce the activation barrier for the decomposition of Cd-TAA complex at the surface of the substrate. The electrochemical reaction is therefore used only to maneuver the chemical formation of CdS to take place preferentially at the substrate surface, while prohibiting the contribution of the solution phase reaction to the film growth.
机译:硫化镉(CdS)薄膜已电化学沉积在含有氯化镉和硫代乙酰胺(TAA)的酸性化学浴中(pH在1.4和4.6之间)。尽管CdS颗粒的化学形成在溶液相中连续发生,但在酸性条件下CdS薄膜不会发生化学生长。发现在低电流密度(数十μA/ cm〜2)下导电衬底上的质子电还原会触发高度结晶的六方CdS薄膜的生长。所得膜由具有六角圆柱形状的颗粒组成。单个颗粒由CdS单晶组成。膜的生长是通过单个微晶的逐个原子生长来实现的,而不是通过在溶液相中形成的细颗粒的团聚来实现的。该膜可以变得厚至500nm而不会遭受膜结构的紊乱。对溶液相中CdS颗粒的形成,膜的生长以及质子在底物上的电还原进行了动力学分析。这些过程的活化能分别为75.3、56.7和21.0 kJ / mol。沉积机理不同于普通的电沉积工艺,因为膜的生长不受电极动力学的控制。认为质子的电还原在底物附近施加pH梯度,以减少用于在底物表面分解Cd-TAA络合物的活化势垒。因此,电化学反应仅用于操纵CdS的化学形成,使其优先在基材表面发生,同时禁止溶液相反应对膜生长的贡献。

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