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Preparation of CdS thin films by chemical-bath-deposition (CBD) and chlorinated-cadmium (CdCl2) heat treatment

机译:化学浴沉积(CBD)和氯化镉(CdCl2)热处理制备CdS薄膜

摘要

The present invention relates to a method of manufacturing a CdS thin film, which comprises forming a CdS thin film having a large crystal size and having a large crystal size, (CdS) thin films prepared by using a CBD method and cleaning the substrate. The present invention also relates to a method of manufacturing a flat surface of a sulfur-cadmium (CdS) thin film, ) Thin film was placed in a carbon boat specially prepared with a solution of CdCl 4 or CdCl 4 and a solution of CdCl 4 or CdS 4 and was exposed to argon, (CdS) thin film with a large crystal size and high flatness and a flat surface is manufactured by heat treatment at a high temperature for 3 to 10 minutes in an open gas atmosphere to produce a high efficiency solar cell (Che7i7al-bath-deposition) method and a chloride-card Card ium (CdS) and a method for manufacturing a thin-film CdS thin film - (Cdc17) sulfide by thermal battery.
机译:CdS薄膜的制造方法技术领域本发明涉及一种CdS薄膜的制造方法,该方法包括形成具有大的晶体尺寸且具有大的晶体尺寸的CdS薄膜,通过CBD法制备的(CdS)薄膜并清洗基板。本发明还涉及一种制造硫-镉(CdS)薄膜的平坦表面的方法,)将薄膜置于专门用CdCl 4或CdCl 4溶液和CdCl 4溶液制备的碳舟中。 CdS 4或CdS 4并暴露于氩气中,通过在露天气氛中在高温下热处理3至10分钟来制造具有大晶体尺寸和高平坦度且平坦表面的(CdS)薄膜,以产生高效率太阳能电池(化学沉积法)和氯化物卡Card(CdS)以及通过热电池制造薄膜CdS薄膜-(Cdc17)硫化物的方法。

著录项

  • 公开/公告号KR980012650A

    专利类型

  • 公开/公告日1998-04-30

    原文格式PDF

  • 申请/专利权人 손영목;

    申请/专利号KR19960028492

  • 发明设计人 송진수;안병태;박성찬;

    申请日1996-07-15

  • 分类号H01L31/042;

  • 国家 KR

  • 入库时间 2022-08-22 02:45:29

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