首页> 外文期刊>The journal of physical chemistry, C. Nanomaterials and interfaces >Atom-by-Atom Growth of CdS Thin Films by an Electrochemical Co-deposition Method: Effects of pH on the Growth Mechanism and Structure
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Atom-by-Atom Growth of CdS Thin Films by an Electrochemical Co-deposition Method: Effects of pH on the Growth Mechanism and Structure

机译:电化学共沉积法逐原子生长CdS薄膜:pH对生长机理和结构的影响

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Thin films of cadmium sulfide (CdS) were prepared on Au(111) by a new electrochemical co-deposition method. The appropriate electrodeposition potentials based on the underpotential deposition potentials (upd) of Cd and S have been determined by the cyclic voltammetric measurements. The films were grown at room temperature from an aqueous solution of CdSO_4, ethylenediaminetetraacetic acid (EDTA), and Na_2S at various pHs. The thin films were characterized by atomic force microscopy (AFM), scanning tunneling microscopy (STM), X-ray diffraction (XRD), and UV-visible spectroscopy techniques. The Cd/S ratio of electrodeposited thin films was found to be 1:1 determined by electron dispersive spectroscopy (EDS). XRD, STM, and AFM results revealed that the electrosynthesized thin films deposited at -0.520 V (vs Ag/AgCl) have a highly preferential orientation along (110) directions for hexagonal crystal and (111) directions for cubic crystal in the solutions with pH = 4 and pH = 5, respectively. The phase transition from cubic to hexagonal structure was observed with decreasing pH below 5. UV-visible absorption measurements as a function of deposition time indicated that the band gap of the CdS film increases as the deposition time decreases.
机译:通过一种新的电化学共沉积方法,在Au(111)上制备了硫化镉(CdS)薄膜。已经通过循环伏安法测量确定了基于Cd和S的欠电位沉积电势(upd)的合适电沉积电势。在室温下,由CdSO_4,乙二胺四乙酸(EDTA)和Na_2S在各种pH值的水溶液中生长薄膜。通过原子力显微镜(AFM),扫描隧道显微镜(STM),X射线衍射(XRD)和紫外可见光谱技术对薄膜进行表征。通过电子分散光谱法(EDS)测定电沉积薄膜的Cd / S比为1∶1。 XRD,STM和AFM结果表明,在pH值为0.6的溶液中,以-0.520 V(vs Ag / AgCl)沉积的电合成薄膜沿六角形晶体的(110)方向和立方晶体的(111)方向具有高度优先的取向= 4和pH = 5。在低于5的pH值下观察到了从立方结构到六方结构的相变。紫外可见吸收测量结果与沉积时间有关,表明CdS膜的带隙随沉积时间的减少而增加。

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