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Deposition of Transparent Indium Tin Oxide Electrodes by Magnetron Sputtering of a Metallic Target on a Cold Substrate

机译:磁控溅射冷靶上金属靶沉积透明氧化铟锡电极

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摘要

Indium tin oxide layers with a surface resistance of 50 Omega/square and a transmission in the visible range of up to 100% are obtained by magnetron sputtering of a metallic target on a cold substrate without ion enhancement of deposition and subsequent annealing. It is shown that the above parameters of the layers can be achieved in a wide range of oxygen partial pressures by controlling the deposition rate and in a wide range of deposition rates by controlling the oxygen partial pressure. An unambiguous dependence of the deposition rate on the oxygen partial pressure in the chamber is constructed.
机译:通过磁控管将金属靶材溅射到冷基板上,而无需增加沉积的离子并随后进行退火,可以获得表面电阻为50Ω/平方,透射率高达100%的铟锡氧化物层。已经表明,通过控制沉积速率,可以在宽范围的氧气分压中获得层的上述参数,并且通过控制氧气分压,可以在宽范围的沉积速率中获得层的上述参数。构建了沉积速率对腔室中氧气分压的明确依赖性。

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