Study of Self-Heating Phenomena in Si Nano Wire MOS Transistor

摘要

In this study, I have numerically investigated the temperature distribution of n-type Si Nano Wire MOS transistor (NW-MOS Tr.) induced by the self-heating effect by using a 3-D device simulator. The dependencies of temperature distribution within the NW-MOS Tr. on both its gate length and width of the Si nano wire were analyzed. First, it is shown that the peak temperature in NW-MOS Tr. increases by 100K with scaling the gate length from 54nm to 14nm in the case of a 50nm width Si nano wire. Next, it is found that the increase of its peak temperature due to scaling the gate length can be suppressed by scaling the size of the Si nano wire, for the first time. The peak temperature suppresses by 160K with scaling the Si nano wire width from 50nm to 10nm in the case of a gate length of 14nm. This study shows very useful results for future NW-MOS Tr. design for suppressing the self-heating effect.