Localized formation of InAs quantum dots on shallow-patterned GaAs(100)

摘要

Selective formation of InAs quantum dots on the sidewalls of mesa strips along both [01-1] and [011] directions of a GaAs(100) surface is demonstrated. This result is in sharp contrast to observations on traditionally deep-patterned substrates, where quantum dots are formed on top mesas and at bottom trenches. This distinction is explained kinetically and energetically. These results may encourage application of organized arrays of quantum dots.