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Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures

机译:变质InAs / InGaAs和InAs / GaAs量子点结构的光电性能比较研究

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摘要

Optical and photoelectric properties of metamorphic InAs/InGaAs and conventional pseudomorphic InAs/GaAs quantum dot (QD) structures were studied. We used two different electrical contact configurations that allowed us to have the current flow (i) only through QDs and embedding layers and (ii) through all the structure, including the GaAs substrate (wafer). Different optical transitions between states of QDs, wetting layers, GaAs or InGaAs buffers, and defect-related centers were studied by means of photovoltage (PV), photoconductivity (PC), photoluminescence (PL), and absorption spectroscopies. It was shown that the use of the InGaAs buffer spectrally shifted the maximum of the QD PL band to 1.3 μm (telecommunication range) without a decrease in the yield. Photosensitivity for the metamorphic QDs was found to be higher than that in GaAs buffer while the photoresponses for both metamorphic and pseudomorphic buffer layers were similar. The mechanisms of PV and PC were discussed for both structures. The dissimilarities in properties of the studied structures are explained in terms of the different design. A critical influence of the defects on the photoelectrical properties of both structures was observed in the spectral range from 0.68 to 1.0 eV for contact configuration (ii), i.e., in the case of electrically active GaAs wafer. No effect of such defects on the photoelectric spectra was found for configuration (i), when the structures were contacted to the top and bottom buffers; only a 0.83 eV feature was observed in the photocurrent spectrum of pseudomorphic structure and interpreted to be related to defects close to InAs/GaAs QDs.
机译:研究了变质InAs / InGaAs和常规伪变InAs / GaAs量子点(QD)结构的光学和光电性能。我们使用了两种不同的电触点配置,这些配置使我们能够使电流(i)仅流过量子点和嵌入层,并且(ii)流过包括GaAs衬底(晶片)在内的所有结构。通过光电压(PV),光导率(PC),光致发光(PL)和吸收光谱学研究了量子点,润湿层,GaAs或InGaAs缓冲液以及缺陷相关中心之间的不同光学跃迁。结果表明,InGaAs缓冲液的使用在光谱上将QD PL波段的最大值移至1.3μm(电信范围)而不会降低产量。发现对于变质QD的光敏性高于GaAs缓冲液中的光敏性,而对变质和假变质缓冲层的光敏性相似。讨论了PV和PC的两种结构的机理。根据不同的设计解释了所研究结构的特性差异。对于接触结构(ii),即在电活性GaAs晶片的情况下,在0.68至1.0eV的光谱范围内观察到了缺陷对两种结构的光电性能的关键影响。当结构与顶部和底部缓冲液接触时,对于结构(i),未发现此类缺陷对光电光谱的影响。在假晶结构的光电流谱中仅观察到0.83 eV特征,并被解释为与InAs / GaAs QD接近的缺陷有关。

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