Epitaxial growth of AIN films on Rh ultraviolet mirrors

摘要

Epitaxial growth of AlN films on mirror polished Rh(111) substrates, with high reflectivity in the ultraviolet (UV) region and high thermal conductivity, was demonstrated using a low temperature growth technique employing pulsed laser deposition. It was found that AlN(OOOl) grows epitaxially on Rh(111) at 450 ℃ with an in-plane epitaxial relationship of AlN[112-bar 0]IIRh[11-bar0] Electron backscattering diffraction observations revealed that neither 30° rotational domains nor cubic phase domains were present in the AlN. X-ray reflectivity measurements revealed that no interfacial layer was present between the AlN films and Rh substrates and that the heterointerface was atomically abrupt, indicating that the Rh substrate still functioned as an UV mirror, even after AlN growth.