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Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
Method for fabricating a III nitride film, substrate for epitaxial growth, III nitride film, epitaxial growth substrate for III nitride element and III nitride element
An acicular structure is formed of AlN on the main surface of a base made of single crystal. Then, a desired Al-including III nitride film is formed on the main surface of the base via the acicular structure.
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