首页> 外文学位 >Development of Epitaxial Strategies towards the Growth of Novel Semiconductor Saturable Absorber Mirrors (SESAMs) for Passively Mode-Locked Optically Pumped Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)
【24h】

Development of Epitaxial Strategies towards the Growth of Novel Semiconductor Saturable Absorber Mirrors (SESAMs) for Passively Mode-Locked Optically Pumped Vertical-External-Cavity Surface-Emitting Lasers (VECSELs)

机译:外延战略的发展,以发展用于无源锁模光泵浦垂直外腔表面发射激光器(VECSEL)的新型半导体可饱和吸收镜(SESAM)

获取原文
获取原文并翻译 | 示例

摘要

Mode-locked VECSEL systems using SESAMs are a relatively less complex and cost-effective alternative to state-of-the-art ultrafast lasers based on solid-state or fiber lasers. This system has seen considerable progress in device performance in terms of pulse width and peak power in the recent years. However, these device characteristics still have to be improved greatly and this system has to become more reliable to become commercially relevant. The realization of femtosecond pulses over long periods of time is non-trivial due to the high sensitivity of SESAM characteristics to minor drifts in growth or cavity conditions. This work focuses on developing novel epitaxial strategies for the growth and optimization of SESAMs towards obtaining sub-100fs pulse durations and increasing the damage threshold for these devices.;As part of this work, we have described in detail a comprehensive growth strategy for InGaAs quantum well (QW) -based SESAMs that are capable of supporting femtosecond pulses. These SESAMs are characterized for reflectivity, temperature-dependence, dispersion control and lifetimes. Through this process, we were able to achieve pulse durations as short as 128fs from InGaAs QW-based SESAMs. This is one of the shortest pulse durations reported to date from mode-locked VECSEL systems. However, it is found that the QW-based SESAMs exhibit poor temporal performance. As an alternative to this system, the latter part of the thesis explores the possibility of using InAs/GaAs submonolayer (SML) quantum dots (QDots) as the saturable absorber for SESAMs around 1microm. Along with higher output power, we were able to realize mode-locking of VECSELs using SML QDot-based SESAMs with pulses as short as 185 fs. To the best of our knowledge, this is the first time SML QDots are used as saturable absorbers for SESAMs in the femtosecond regime. We also found that QDot-based SESAMs have substantially longer lifetimes compared to QW-based SESAMs.
机译:使用SESAM的锁模VECSEL系统相对于基于固态激光器或光纤激光器的最新超快激光器而言,是一种相对简单,经济高效的替代方案。近年来,该系统在脉冲宽度和峰值功率方面在设备性能方面取得了长足进步。但是,这些设备的特性仍然必须大大改善,并且该系统必须变得更加可靠才能在商业上得到应用。飞秒脉冲在很长一段时间内的实现是不平凡的,因为SESAM特性对生长或空腔条件下的微小漂移具有很高的敏感性。这项工作的重点是为SESAMs的生长和优化开发新颖的外延策略,以获得亚100fs的脉冲持续时间并增加这些器件的损伤阈值。;作为工作的一部分,我们详细描述了InGaAs量子的全面生长策略基于QW的SESAM,能够支持飞秒脉冲。这些SESAM具有反射率,温度相关性,色散控制和使用寿命的特点。通过这一过程,我们能够从基于InGaAs QW的SESAMs中获得短至128fs的脉冲持续时间。这是迄今为止锁模VECSEL系统报告的最短脉冲持续时间之一。但是,发现基于QW的SESAM表现出较差的时间性能。作为该系统的替代方案,本文的后半部分探讨了使用InAs / GaAs亚单层(SML)量子点(QDots)作为SESAMs大约1微米的可饱和吸收剂的可能性。随着更高的输出功率,我们能够使用基于SML QDot的SESAM(脉冲频率短至185fs)实现VECSEL的锁模。据我们所知,这是第一次将SML QDots用作飞秒状态下SESAM的饱和吸收剂。我们还发现,与基于QW的SESAM相比,基于QDot的SESAM具有更长的使用寿命。

著录项

  • 作者

    Addamane, Sadhvikas J.;

  • 作者单位

    The University of New Mexico.;

  • 授予单位 The University of New Mexico.;
  • 学科 Electrical engineering.;Engineering.
  • 学位 Ph.D.
  • 年度 2017
  • 页码 125 p.
  • 总页数 125
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号