AIN Epitaxial Film Growth Using MOCVD For a GHz-band FBAR

摘要

We present the fabrication of a film-bulk-acoustic resonator (FBAR) with a highly c-axis- orientedA1N film on Mo/SiO2/Si (100) by using metal-organic chemical-vapor deposition (MOCVD). Theresonant frequency and the anti-resonant frequency of the fabricated resonator were 3.219 GHz and3.249 GHz, respectively. The quality factor and the effective electromechanical coupling coefficient(Ice2f f) were 24.7 and 2.65%, respectively. The conditions of A1N deposition were a substrate tem-perature of 950 °C, a pressure of 20 Torr, and a V-Ill ratio of 25000. We successfully grew highlyc-axis-oriented A1N film with 4 x 10-5 C2cm resistivity for the Mo bottom electrode. The full widthsat half maximum (FWHM) for the AIN (0002) deposited on Mo/SiO2/Si (100) and Mo/Si02/Si(111) were 4° and 3.8°, respectively. The FWHM value of the deposited A1N film meets the RFband-pass-filter specification for a GHz-band wireless local area network.