Optical properties of yellow light-emitting diodes grown on semipolar (1122) bulk GaN substrates

摘要

We demonstrate high power yellow InGaN single-quantum-well light-emitting diodes (LEDs) with a peak emission wavelength of 562.7 nm grown on low extended defect density semipolar (1122) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency at drive currents of 20 and 200 mA under pulsed operation (10% duty cycle) were 5.9 mW, 13.4% and 29.2 mW, 6.4%, respectively. It was observed that the temperature dependence of the output power of InGaN LEDs was significantly smaller than that of AlInGaP LEDs.