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Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy

机译：通过金属有机气相外延在蓝宝石和块状氮化铝衬底上生长的掺硅氮化铝镓和紫外发光二极管的复合动力学

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作者
Chen, Kaixuan;
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作者单位

Rensselaer Polytechnic Institute;

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授予单位 Rensselaer Polytechnic Institute;
学科
学位 Ph.D.
年度 2008
页码 134 p.
总页数 134
原文格式 PDF
正文语种 eng
中图分类
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专利

1. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique [J] . L.E. RODAK, D. KORAKAKIS Journal of Electronic Materials . 2011,第4期

机译：使用数字生长技术通过金属有机气相外延生长的氮化铝镓合金
2. Aluminum Gallium Nitride Alloys Grown via Metalorganic Vapor-Phase Epitaxy Using a Digital Growth Technique [J] . L. E. Rodak, D. Korakakis Journal of Electronic Materials . 2011,第4期

机译：使用数字生长技术通过金属有机气相外延生长的氮化铝镓合金
3. Investigation of light output performance for gallium nitride-based light-emitting diodes grown on different shapes of patterned sapphire substrate [J] . Yang Guofeng, Chang Jianjun, Zhao Jianli, Materials science in semiconductor processing . 2015,第Null期

机译：研究在不同形状的图案化蓝宝石衬底上生长的氮化镓基发光二极管的光输出性能
4. Pendeo-epitaxy of gallium nitride and aluminum nitride films and heterostructures on silicon carbide substrate [C] . T.Gehrke, K.J.Linthicum, D.B.Thomson, Symposium on GaN and related alloys . 1999

机译：碳化硅衬底上氮化镓和氮化铝膜的五元外延和异质结构
5. Development of gallium nitride-based ultraviolet and visible light-emitting diodes using hydride vapor-phase epitaxy and molecular beam epitaxy. [D] . Cabalu, Jasper Sicat. 2006

机译：利用氢化物气相外延和分子束外延技术开发基于氮化镓的紫外和可见光发光二极管。
6. Indium gallium nitride-based ultraviolet blue and green light-emitting diodes functionalized with shallow periodic hole patterns [O] . Hyun Jeong, Rafael Salas-Montiel, Gilles Lerondel, -1

机译：基于氮化铟镓的紫外蓝色和绿色发光二极管具有浅周期性孔图案
7. Selective mask formation and gallium nitride template fabrication on patterned sapphire substrates for light-emitting diodes [O] . Seunghee Cho, Woo Seop Jeong, Min Joo Ahn, 2020

机译：用于发光二极管的图案蓝宝石基板上的选择性掩模形成和氮化镓模板制造
8. Control of Defects in Aluminum Gallium Nitride ((Al)GaN) Films on Grown Aluminum Nitride (AlN) Substrates. [R] . Batyrev, I. G., Wu, C., Chung, P. W., 2013

机译：成长氮化铝（alN）衬底上氮化铝镓（（al）GaN）薄膜缺陷的控制。

Recombination dynamics in silicon-doped aluminum gallium nitride and ultraviolet light-emitting diodes grown on sapphire and bulk aluminum nitride substrates by metal-organic vapor-phase epitaxy

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