机译:局部键合对非晶HfSiO_4中氧空位缺陷状态的影响
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;
Department of Physics, Korea Advanced Institute of Science and Technology, Daejeon 305-701, Republic of Korea;
机译:HfO_2和HfSiO_4中氟的氧空位钝化机理的比较研究
机译:点缺陷的集中浓度较高的区域,位于浓缩介质的内部界面附近:III。 Pd,Ta,W和Pt中点缺陷浓度增加的区域中空位氧配合物的组成和结构
机译:点缺陷的集中浓度较高的区域,位于浓缩介质的内部界面附近:II。在Pd,W和Pt的点缺陷浓度增加的区域中形成空氧复合物
机译:辐射对SiO
机译:X射线吸收精细结构和同步辐射总X射线散射研究非晶铟锌氧薄膜的局部键合环境。
机译:电场和栅极偏置脉冲对非晶In-Ga-Zn-O薄膜晶体管中电离氧空位的迁移和稳定性的影响
机译:用CO和CO2分子退火对SiC热氧化形成的无定形SiO2中氧空位缺陷密度的影响