OXYGEN VACANCY OF AMORPHOUS INDIUM GALLIUM ZINC OXIDE PASSIVATION BY SILICON ION TREATMENT

摘要

Methods and apparatus for forming a thin film transistor (TFT) having a metal oxide layer. The method may include forming an amorphous metal oxide layer and treating the metal oxide layer with a silicon containing gas or plasma including Si4+ ions. The silicon treatment of the metal oxide layer helps fill the oxygen vacancies in the metal oxide channel layer, leading to a more stable TFT and preventing a negative threshold voltage in the TFT.