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IMPROVEMENT OF REVERSE RECOVERY USING OXYGEN-VACANCY DEFECTS
IMPROVEMENT OF REVERSE RECOVERY USING OXYGEN-VACANCY DEFECTS
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机译:利用氧空缺缺陷改善逆向恢复
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摘要
A semiconductor device comprises a semiconductor substrate, a first electrode formed on a first main surface of the semiconductor substrate, and a second electrode formed on a second main surface of the semiconductor substrate. The semiconductor substrate includes a first region in which a density of oxygen-vacancy defects is greater than a density of vacancy cluster defects, and a second region in which the density of vacancy cluster defects is greater than the density of oxygen-vacancy defects.
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