机译:未掺杂GaN中红色发光带的精细结构
Department of Physics, Virginia Commonwealth University, Richmond, Virginia 23284, USA;
Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729, USA,Saint-Petersburg National Research University of Information Technologies, Mechanics and Optics,49 Kronverkskiy Ave., 197101 Saint Petersburg, Russia;
Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729, USA;
Nitride Crystals, Inc., 181E Industry Ct., Ste. B, Deer Park, New York 11729, USA;
机译:未掺杂GaN中红色发光带的精细结构
机译:未掺杂GaN中另一个蓝色发光带的精细结构
机译:两波长激发光致发光显示未掺杂GaN中的黄色发光带
机译:海蓝宝石发光乐队在未掺杂的甘
机译:用同步加速器辐射研究宽带隙GaN和薄铝掺杂层的电子和原子结构。
机译:未掺杂GaN中的两个黄色发光带
机译:未掺杂GaN中红色发光带的精细结构