GATELESS FET TYPE PH SENSOR UTILIZING UNDOPED A1GAN/GAN HEMT STRUCTURE

摘要

9 ABSTRACT GATELESS FET TYPE PH SENSOR UTILJSING UNDOPED AIGAN/GAN HEMT STRUCTURE THE PRESENT INVENTION PROVIDE A PH SENSOR DEVICE (100) COMPRISING A SUBSTRATE 5 (I 02), A BUFFER LAYER (I 04) FORMED ON THE SUBSTRATE (I 02), AN UNDOPED GAN LAYER (I 06) FORMED ON THE BUFFER LAYER (I 04); AND AN UNDOPED ALGAN LAYER (I 08) FORMED ON THE UNDOPED GAN LAYER (I 06). THE SENSOR DEVICE (I 00) IS FORMED BASED ON A GATELESS FET TYPE STRUCTURE FABRICATED WITH UNDOPED GAN/ALGAN HEMT STRUCTURE. THE SENSOR (100) FURTHER INCLUDES A TWO DIMENSIONAL ELECTRON GAS (2DEG) PROVIDED OR FORMED IO PREFERABLY NEAR THE SURFACE SO AS TO ALLOW HIGHLY SENSITIVE DETECTION OF SAMPLE. MOST ILLUSTRATIVE DRAWINGS: FIG. I