机译:在精确取向的GaP / Si(001)衬底上生长的In(Ga)As / GaAs量子点的原子结构和化学计量
Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin, Germany;
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA;
Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin, Germany;
Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin, Germany;
Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin, Germany;
Microelectronics Research Center and ECE Department, The University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center and ECE Department, The University of Texas at Austin, Austin, Texas 78758, USA;
Microelectronics Research Center and ECE Department, The University of Texas at Austin, Austin, Texas 78758, USA;
Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA;
Institut fuer Festkoerperphysik, Technische Universitaet Berlin, D-10623 Berlin, Germany,Department of Electrical Engineering, Yale University, New Haven, Connecticut 06520, USA;
机译:通过金属有机化学气相沉积在图案化精确定向(001)硅基板上的大面积直接异轴长度增长1550nm-nm ing-incum-pont结构
机译:通过原子力显微镜局部氧化纳米光刻技术在GaAs(001)图案化衬底上生长的InAs量子点的定点横向排列
机译:GaAs / AIGaAs量子线和液滴外延在(311)A衬底上生长的量子点的结构原子尺度分析
机译:通过原子层外延技术在仅 - (001)GaAs底物上生长的电线等各向异性InGaAs量子点的室温1.35μm发射
机译:基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
机译:应变补偿的InGaAsP超晶格用于通过金属有机化学气相沉积减少在精确取向的(001)图案化Si衬底上生长的InP的缺陷
机译:在GaAs(001)基板上生长的垂直堆叠的替代矩形矩阵半型喹系纳米复合异质结构的透射电子显微镜