InGaAs - InGaAs Quantum dot-ring structure grown using droplet epitaxy and method of manufacturing the same

摘要

According to an embodiment of the present invention, provided is an InGaAs quantum dot-ring structure manufacturing method which includes: a step of forming indium droplets on the surface of a GaAs substrate at an indium flux of 0.1 (±5%) ML/s; a step of generating InGaAs nanocrystals by supplying As to the surface of the GaAs substrate with an As valve which is 5% opened while maintaining 350 °C for 120 seconds; and a step of growing the InGaAs nanocrystals into an InGaAs quantum dot-ring structure by supplying the As with the As valve which is fully opened while maintaining 350 °C for 120 seconds. The InGaAs quantum dot-ring structure is formed with a first valley which is narrower than a second valley formed in the front and rear sides, and the structure is grown to have an oval ring formed in the center and a ring edge including a ridge comprising a second InGaAs quantum dot formed in the left side and a first InGaAs quantum dot formed in the right side at a lower height than the second InGaAs quantum dot.