Field-Effect Transistors of Tetracene Single Crystal on Top of a Flexible Substrate

摘要

Tetracene single crystals were prepared by the vapor transport method. The polyimide films were used for both substrate and gate dielectric layer. The single-crystal FETs should perform better than thin film transistors. Very thin crystals (～1 μm) were adhered to the substrate by due to electrostatic forces. The mobility of tetracene single-crystal field-effect transistors reaches the room-temperature value of 5 × 10~(-4) cm~2/Vs.