High-temperature modeling of AlGaN/GaN HEMTs

摘要

Wide bandgap, high saturation velocity, and high thermal stability are some of the properties of GaN, which make it an excellent material for high-power, high frequency, and high temperature applications. Given the predicted wide-spread use, reliable models are needed for simulation-based optimization. As several application areas require the devices to operate at elevated temperatures, a proper modeling of the temperature dependences of the band structure and transport parameters is highly important. We present two-dimensional hydrodynamic simulations of AlGaN/GaN high electron mobility transistors (HEMTs) supported by measured data at high temperatures.