Small signal modeling of HEMTs AlGaN/GaN/SiC for sensor and high-temperature applications

摘要

Thermal and small-signal model parameters analysis have been carried out on 0.25 mm x (2 x 140 mu m) AIGaN/GaN HEMT grown on SiC substrate. Two different technologies are investigated in order to establish a detailed understanding of their capabilities in terms of frequency and passivation using on-wafer S-parameter measurement at the temperature 300 K.