机译:AlGaN / GaN HEMT的高温建模
Advanced Material and Device Analysis Croup, Inst. for Microelectronics, TV Wien, Gusshausstr. 27-29, 1040 Vienna, Austria;
Advanced Material and Device Analysis Croup, Inst. for Microelectronics, TV Wien, Gusshausstr. 27-29, 1040 Vienna, Austria;
Fraunhofer Inst. for Solid-State Physics (1AF), Tullastr. 72, 79108 Freiburg, Germany;
Fraunhofer Inst. for Solid-State Physics (1AF), Tullastr. 72, 79108 Freiburg, Germany;
AlGaN/GaN; HEMT; high-temperature; modeling; simulation;
机译:HEMT AlGaN / GaN / SiC的小信号建模,用于传感器和高温应用
机译:用于高温应用的阈值电压调制的AlGaN / GaN MIS-HEMT的单片比较器和锯齿发生器
机译:用浇口金属处理改进的AlGaN / AlN / GaN HEMT的高温稳定性
机译:AlGaN / GaN HEMT的高温建模
机译:GaN-SiC界面处具有GaN微坑的AlGaN / GaN HEMT中的散热分析
机译:使用AlGaN / GaN / AlGaN量子阱电子阻挡层的AlGaN / GaN HEMT中的高击穿电压
机译:栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明,栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明