首页> 外文会议>Optical microlithography XXVI >Imaging Application tools for extremely low-k1 ArF immersion lithography
【24h】

Imaging Application tools for extremely low-k1 ArF immersion lithography

机译:用于极低k1 ArF浸没式光刻的成像应用工具

获取原文
获取原文并翻译 | 示例

摘要

The k1 factor continues to be driven downward in ArF immersion lithography, even below its limit from optical theory, using various lithographic techniques such as co mbination of Source and Mask Optimization (SMO) and multiple patterning. Such a low kl factor tends to lead to extremely high sensitivity tp imaging parameters such as aberrations, distortion, illumination pupilgram shape, dose, focus, etc. Therefore, fast, precise and stable settings of these parameters are crucial to make such hyper low k1 lithography practical. We introduce various kinds of imaging application tools and technique, which we have been developing, to support the imaging parameter settings and control. The application tools cover illumination pupilgram adjustment for freeform illumination, automatic aberration control, and thermal aberration parameter settings.
机译:在ArF浸没式光刻中,k1因子继续被向下驱动,甚至低于光学理论的极限,它使用各种光刻技术,例如源和掩模优化(SMO)的结合以及多次构图。如此低的kl因子往往会导致非常高的tp成像参数,例如像差,畸变,照明瞳孔形状,剂量,焦点等。因此,快速,精确和稳定地设置这些参数对于使此类k1超低至关重要光刻实用。我们介绍了我们正在开发的各种成像应用工具和技术,以支持成像参数设置和控制。该应用程序工具涵盖了用于自由形式照明的照明光瞳调整,自动像差控制和热像差参数设置。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号