Acid-Catalyzed Single-Layer Resists for ArF Lithography

摘要

A positive-tone single-layer resist for use with 193-nm radiation has beendeveloped. The system contains a terpolymer of methyl methacrylate, methacrylic acid, and t-butyl methacrylate, along with a photo-acid generator. The chemically amplified deprotection of the t-butyl methacrylate into methacrylic acid increases the polarity of the resist and allows selective dissolution in metal-ion-free aqueous base solutions. The resist sensitivity is less than 10 mj/sq cm, and its inherent resolution is better than 0. 1 micron. These acrylate-based systems have potential for both lower cost and better environmental stability compared with the deep ultraviolet chemically amplified resists which use phenolic resins. Photoresist, Lithography, Methacrylate, Acid-catalyzed.